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BSC0910NDIATMA1

BSC0910NDIATMA1

MOSFET 2N-CH 25V 16A/31A TISON8

BSC0910NDIATMA1

BSC0910NDIATMA1

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Part No :

BSC0910NDIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 25V 16A/31A TISON8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14436 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BSC0910NDIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:11A, 31A
Rds On (Max) @ Id, Vgs:4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 12V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
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