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SSM6N35FE,LM

SSM6N35FE,LM

MOSFET 2N-CH 20V 0.18A ES6

SSM6N35FE,LM

SSM6N35FE,LM

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Part No :

SSM6N35FE,LM

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET 2N-CH 20V 0.18A ES6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11609 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
SSM6N35FE,LM PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:180mA
Rds On (Max) @ Id, Vgs:3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 3V
Power - Max:150mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6 (1.6x1.6)
SSM6N35FE,LM is available at GangBo-ic.com, Please review product page below for detailed information, including SSM6N35FE,LM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM6N35FE,LM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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