MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2A, 1.5A |
Rds On (Max) @ Id, Vgs: | 136mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 128pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-MCPH |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPS1120DRTexas Instruments |
MOSFET 2P-CH 15V 1.17A 8-SOIC |
|
TSM3911DCX6 RFGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 2.2A SOT26 |
|
SI7972DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
MAX5054BATA+Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
IRF7509TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
|
SI7913DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A 1212-8 |
|
SQJ968EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
|
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
|
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |
|
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |