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FDMS3660S

FDMS3660S

MOSFET 2N-CH 30V 30A/60A POWER56

FDMS3660S

FDMS3660S

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Part No :

FDMS3660S

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET 2N-CH 30V 30A/60A POWER56
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10321 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
FDMS3660S PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:30A, 60A
Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1765pF @ 15V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:Power56
FDMS3660S is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS3660S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS3660S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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