MOSFET N/P-CH 100V 2A 8-SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 2A |
Rds On (Max) @ Id, Vgs: | 230mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 497pF @ 50V |
Power - Max: | 1.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
5HN01S-TL-ERochester Electronics |
N-CHANNEL MOSFET |
![]() |
FDMB2308PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH MLP2X3 |
![]() |
DMN3270UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
![]() |
NTHD4502NT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
NTMFD4C88NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
![]() |
IRF7311PBFRochester Electronics |
HEXFET POWER MOSFET |
![]() |
ALD210814SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
![]() |
BSL308PEH6327XTSA1IR (Infineon Technologies) |
MOSFET 2P-CH 30V 2A 6TSOP |
![]() |
DMP2065UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 4.5A UDFN2020-6 |
![]() |
QS8M51TRROHM Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8 |
![]() |
2N7002VASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 280MA SOT563F |
![]() |
NTLJD3183CZTBGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
![]() |
SSM6N37FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.25A 2-2N1D |