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NTMFD4C88NT1G

NTMFD4C88NT1G

POWER FIELD-EFFECT TRANSISTOR

NTMFD4C88NT1G

NTMFD4C88NT1G

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Part No :

NTMFD4C88NT1G

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
17500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NTMFD4C88NT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:11.7A, 14.2A
Rds On (Max) @ Id, Vgs:5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1252pF @ 15V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
NTMFD4C88NT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFD4C88NT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFD4C88NT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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