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MOSFET 2N-CH 40V 20A 8TDSON

IPG20N04S4L08ATMA1

IPG20N04S4L08ATMA1

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Part No :

IPG20N04S4L08ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 40V 20A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
070107 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 11 - Apr 15 2025
PDF
IPG20N04S4L08ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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