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JG20-1.25HPTTX

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BSC112N06LDATMA1

BSC112N06LDATMA1

TRENCH 40<-<100V

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BSC112N06LDATMA1

BSC112N06LDATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC112N06LDATMA1

Manufacturer
IR (Infineon Technologies)
Description
TRENCH 40<-<100V
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10116 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 29 - Jul 03 2024
Type Description
Series:OptiMOS™-T2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Rds On (Max) @ Id, Vgs:11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:4020pF @ 30V
Power - Max:65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
BSC112N06LDATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC112N06LDATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC112N06LDATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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