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MMDF2C03HDR2G

MMDF2C03HDR2G

P-CHANNEL POWER MOSFET

MMDF2C03HDR2G

MMDF2C03HDR2G

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Part No :

MMDF2C03HDR2G

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10457 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
MMDF2C03HDR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4.1A, 3A
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:630pF @ 24V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
MMDF2C03HDR2G is available at GangBo-ic.com, Please review product page below for detailed information, including MMDF2C03HDR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MMDF2C03HDR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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