MOSFET 2N-CH 20V 9.4A 8-SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 14mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SK2727-ERochester Electronics |
10A, 500V, N-CHANNEL MOSFET |
|
APTM10HM19FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 70A SP3 |
|
AO8814Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.5A 8TSSOP |
|
SQJ960EP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 8A |
|
BSL806NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF432Rochester Electronics |
HEXFET POWER MOSFETS |
|
SQJ244EP-T1_GE3Vishay / Siliconix |
MOSFET DUAL N-CHA 40V PPAK SO-8L |
|
ALD212904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
6LN04CH-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMC2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
FDW9926NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPG20N06S2L50ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
VMM45-02FWickmann / Littelfuse |
MOSFET 2N-CH 200V 45A TO-240AA |