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SIT8008BC-21-18E-25.000000E

SIT8008BC-21-18E-25.000000E

MEMS OSC XO 25.0000MHZ H/LV-CMOS

IPG20N06S2L50ATMA1

IPG20N06S2L50ATMA1

MOSFET 2N-CH 55V 20A 8TDSON

84384N

84384N

3/8" DR 6PT DEEP UNIV SOCKET 18M

IPG20N06S2L50ATMA1

IPG20N06S2L50ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPG20N06S2L50ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 55V 20A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10100 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPG20N06S2L50ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:560pF @ 25V
Power - Max:51W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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