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SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

MOSFET 2N-CH 60V 8A

SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

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Part No :

SQJ960EP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 60V 8A
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
12921 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SQJ960EP-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:735pF @ 25V
Power - Max:34W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
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