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ALD1101BSAL

ALD1101BSAL

MOSFET 2N-CH 10.6V 8SOIC

1N4003-N-2-2-BP

1N4003-N-2-2-BP

DIODE GEN PURP 200V 1A DO41

ALD1101BSAL

ALD1101BSAL

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Part No :

ALD1101BSAL

Manufacturer
Advanced Linear Devices, Inc.
Description
MOSFET 2N-CH 10.6V 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
879587 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
ALD1101BSAL PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:2 N-Channel (Dual) Matched Pair
FET Feature:Standard
Drain to Source Voltage (Vdss):10.6V
Current - Continuous Drain (Id) @ 25°C:40mA
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:500mW
Operating Temperature:0°C ~ 70°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
ALD1101BSAL is available at GangBo-ic.com, Please review product page below for detailed information, including ALD1101BSAL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ALD1101BSAL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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