POWER FIELD-EFFECT TRANSISTOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 13.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 1.4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-XFBGA, FCBGA |
Supplier Device Package: | 4-EFCP (1.01x1.01) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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