English
简体中文
MOSFET N/P-CH 20V 8TSDSON
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N and P-Channel Complementary |
| FET Feature: | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A, 3.2A |
| Rds On (Max) @ Id, Vgs: | 55mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.4V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 419pF @ 10V |
| Power - Max: | 2.5W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TSDSON-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
CSD87503Q3ETTexas Instruments |
30-V DUAL N-CHANNEL MOSFET, COMM |
|
DMC62D0SVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT563 T&R |
|
BSM080D12P2C008ROHM Semiconductor |
SIC POWER MODULE-1200V-80A |
|
PMV55ENEA,215Rochester Electronics |
3.1A, 60V, N CHANNEL, SILICON, M |
|
SSM6N15AFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A 2-2J1C |
|
IRF8313PBFRochester Electronics |
HEXFET POWER MOSFET |
|
CSD86356Q5DTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
AO6602LAlpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 6-TSOP |
|
RF1S15N06Rochester Electronics |
DISCRETE ,LOGIC LEVEL GATE (5V), |
|
NVMFD5C672NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 49A S08FL |
|
NTJD1155LT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH SC-88-6 |
|
ALD110808SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
SSM6P35AFU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |