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SI7962DP-T1-E3

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MOSFET 2N-CH 40V 7.1A PPAK SO-8

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SI7962DP-T1-E3

SI7962DP-T1-E3

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Part No :

SI7962DP-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 40V 7.1A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
19100 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI7962DP-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:7.1A
Rds On (Max) @ Id, Vgs:17mOhm @ 11.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SI7962DP-T1-E3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7962DP-T1-E3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7962DP-T1-E3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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