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BSZ0910NDXTMA1

BSZ0910NDXTMA1

DIFFERENTIATED MOSFETS

BSZ0910NDXTMA1

BSZ0910NDXTMA1

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Part No :

BSZ0910NDXTMA1

Manufacturer
IR (Infineon Technologies)
Description
DIFFERENTIATED MOSFETS
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
13420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
PDF
BSZ0910NDXTMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs:9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 15V
Power - Max:1.9W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-WISON-8
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