CAP CER 0.27UF 16V X7R 1812
TVS DIODE 17V 27.6VC 600W SMBJ
MOSFET 2N-CH 10.6V 0.08A 8DIP
INCREMENTAL ENCODER 1024 PPR
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SP8K1FRATBROHM Semiconductor |
30V NCH+NCH POWER MOSFET - SP8K1 |
|
SIA907EDJT-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC-70-6L |
|
IRF7907TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 9.1A/11A 8SO |
|
SSM6P39TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
|
FDG6332C-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SC70-6 |
|
MTM78E2B0LBFPanasonic |
MOSFET 2N-CH 20V 4A WSMINI8-F1-B |
|
IRF7301TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 5.2A 8-SOIC |
|
SIB900EDK-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.5A SC-75-6 |
|
SSM6L09FUTE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 30V 0.4A/0.2A US6 |
|
DMP2100UFU-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V U-DFN2030-6 |
|
EPC2104EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
|
NTJD4152PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 0.88A SOT-363 |
|
FDS4501HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V 8SOIC |