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SQUN702E-T1_GE3

SQUN702E-T1_GE3

MOSFET N&P-CH COMMON DRAIN

SQUN702E-T1_GE3

SQUN702E-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQUN702E-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N&P-CH COMMON DRAIN
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10150 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel, Common Drain
FET Feature:Standard
Drain to Source Voltage (Vdss):40V, 200V
Current - Continuous Drain (Id) @ 25°C:30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs:9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC, 14nC, 30.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1474pF, 1450pF, 1302pF @ 20V, 100V
Power - Max:48W (Tc), 60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:Die
Supplier Device Package:Die
SQUN702E-T1_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQUN702E-T1_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQUN702E-T1_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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