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SSM6N7002BFE,LM

SSM6N7002BFE,LM

Image is for reference, please contact us to get the real picture

Part No :

SSM6N7002BFE,LM

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET 2N-CH 60V 0.2A ES6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
779077 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SSM6N7002BFE,LM PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:17pF @ 25V
Power - Max:150mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
SSM6N7002BFE,LM is available at GangBo-ic.com, Please review product page below for detailed information, including SSM6N7002BFE,LM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM6N7002BFE,LM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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