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MSCSM120HM31CT3AG

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PM-MOSFET-SIC-SBD~-SP3F

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MSCSM120HM31CT3AG

MSCSM120HM31CT3AG

Image is for reference, please contact us to get the real picture

Part No :

MSCSM120HM31CT3AG

Manufacturer
Roving Networks / Microchip Technology
Description
PM-MOSFET-SIC-SBD~-SP3F
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
839083 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:4 N-Channel
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Rds On (Max) @ Id, Vgs:31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:3020pF @ 1000V
Power - Max:395W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:SP3F
MSCSM120HM31CT3AG is available at GangBo-ic.com, Please review product page below for detailed information, including MSCSM120HM31CT3AG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MSCSM120HM31CT3AG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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  • MSCSM120HM31CT3AG Price
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