MOSFET 2P-CH 12V 4.8A WMINI8-F1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A |
Rds On (Max) @ Id, Vgs: | 32mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | WMini8-F1 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MSCSM120AM02CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
DMP2200UDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.9A SOT363 |
|
SLA5085Sanken Electric Co., Ltd. |
MOSFET 5N-CH 60V 10A 12-SIP |
|
US6M11TRROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6 |
|
RFD3055SM9AS2479Rochester Electronics |
12A, 60V, 0.15OHM, N-CHANNEL, |
|
TSM8588CS RLGTSC (Taiwan Semiconductor) |
COMPLEMENTARY N & P-CHANNEL POWE |
|
QS6J1TRROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6 |
|
BSM180D12P3C007ROHM Semiconductor |
SIC POWER MODULE |
|
NVB5404NT4GRochester Electronics |
24A, 40V, 0.0045OHM, N-CHANNEL, |
|
IRF7762TRLPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
SSM6L36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH + P-CH |
|
DMP2065UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 20V 4.5A DFN2020-6 |
|
UPA1759G-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |