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BSM180D12P3C007

BSM180D12P3C007

SIC POWER MODULE

BSM180D12P3C007

BSM180D12P3C007

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Part No :

BSM180D12P3C007

Manufacturer
ROHM Semiconductor
Description
SIC POWER MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
788978 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
BSM180D12P3C007 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Power - Max:880W
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Module
Supplier Device Package:Module
BSM180D12P3C007 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM180D12P3C007 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM180D12P3C007 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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