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US6M11TR

US6M11TR

MOSFET N/P-CH 20V/12V TUMT6

US6M11TR

US6M11TR

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Part No :

US6M11TR

Manufacturer
ROHM Semiconductor
Description
MOSFET N/P-CH 20V/12V TUMT6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10334 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
US6M11TR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V, 12V
Current - Continuous Drain (Id) @ 25°C:1.5A, 1.3A
Rds On (Max) @ Id, Vgs:180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:110pF @ 10V
Power - Max:1W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:TUMT6
US6M11TR is available at GangBo-ic.com, Please review product page below for detailed information, including US6M11TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for US6M11TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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