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SIA929DJ-T1-GE3

SIA929DJ-T1-GE3

MOSFET 2P-CH 30V 4.5A SC70-6

SIA929DJ-T1-GE3

SIA929DJ-T1-GE3

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Part No :

SIA929DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 30V 4.5A SC70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10474 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SIA929DJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Rds On (Max) @ Id, Vgs:64mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:575pF @ 15V
Power - Max:7.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
SIA929DJ-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIA929DJ-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIA929DJ-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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