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SI9926CDY-T1-GE3

SI9926CDY-T1-GE3

MOSFET 2N-CH 20V 8A 8-SOIC

SI9926CDY-T1-GE3

SI9926CDY-T1-GE3

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Part No :

SI9926CDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 8A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
17961 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI9926CDY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:18mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 10V
Power - Max:3.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
SI9926CDY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI9926CDY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI9926CDY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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