DIODE SCHOTTKY 20A 45V TO-263AB
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | - |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDBMH1150-HFComchip Technology |
DIODE SCHOTTKY 150V 1A SOD123T |
|
B540C-13-GZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 5A SMC |
|
CDBZ3860L-HFComchip Technology |
DIODE SCHOTTKY 2A Z3PAK |
|
RS 1BSanken Electric Co., Ltd. |
DIODE GEN PURP 800V 700MA AXIAL |
|
NGTD9R120F2WPSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
|
6A05G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
|
SIDC73D170E6X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.7KV 100A WAFER |
|
BAT43-L0 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY DO-35 |
|
SIDC06D65C8X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 20A WAFER |
|
SIDC04D60F6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 600V 9A WAFER |
|
JANTX1N6630UMicrosemi |
DIODE GEN PURP 900V 1.4A E-MELF |
|
SIDC53D120H6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 100A WAFER |
|
R9G20811ASOOPowerex, Inc. |
DIODE FAST REC R9G 1100A 800V |