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VS-C08ET07T-M3

VS-C08ET07T-M3

SILICON CARBIDE DIODE - TO-220

SIDC53D120H6X1SA3

SIDC53D120H6X1SA3

DIODE GEN PURP 1.2KV 100A WAFER

SIDC53D120H6X1SA3

SIDC53D120H6X1SA3

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Part No :

SIDC53D120H6X1SA3

Manufacturer
IR (Infineon Technologies)
Description
DIODE GEN PURP 1.2KV 100A WAFER
Catalog
Diodes - Rectifiers - Single
Availability
799979 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
SIDC53D120H6X1SA3 PDF
Type Description
Series:-
Package:Bulk
Part Status:Discontinued at Digi-Key
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):100A (DC)
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 100 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:27 µA @ 1200 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Sawn on foil
Operating Temperature - Junction:-55°C ~ 150°C
SIDC53D120H6X1SA3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIDC53D120H6X1SA3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIDC53D120H6X1SA3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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