DIODE SCHOTTKY DO-35
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 200 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 5 ns |
Current - Reverse Leakage @ Vr: | 500 nA @ 25 V |
Capacitance @ Vr, F: | 7pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIDC06D65C8X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 20A WAFER |
|
SIDC04D60F6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 600V 9A WAFER |
|
JANTX1N6630UMicrosemi |
DIODE GEN PURP 900V 1.4A E-MELF |
|
SIDC53D120H6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 100A WAFER |
|
R9G20811ASOOPowerex, Inc. |
DIODE FAST REC R9G 1100A 800V |
|
GP10BE-075E3/93Vishay General Semiconductor – Diodes Division |
RECTIFIER |
|
1SS400G9JTE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |
|
RB751S-40T9TE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
1N3613GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
UG06DHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 600MA TS-1 |
|
R9G20212CSOOPowerex, Inc. |
DIODE GP 200V 1200A DO200AB |
|
CPD65-BAV45-WNCentral Semiconductor |
DIODE GEN PURP 35V 50MA CHIP |
|
RM50HG-12SPowerex, Inc. |
DIODE GEN PURP 600V 50A TO264-3 |