CAP CER 0.7PF 200V C0G/NP0 1206
CAP CER 5.6PF 250V C0G/NP0 2211
DIODE SCHOTTKY 40V 350MA SOD123
ERC-55 499K 1% T-2 RNC55H4993FR
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 350mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 200 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 10 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 30 V |
Capacitance @ Vr, F: | 28pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
80EPS12Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
|
SE70PBHM3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2.9A TO277A |
|
SFS1008GHMNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A TO263AB |
|
HER605GP-APMicro Commercial Components (MCC) |
DIODE GPP HE 6A R-6 |
|
VS-MURB1520PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 15A D2PAK |
|
GPP60DHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A P600 |
|
1N4937GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
1N5822 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A DO201AD |
|
V8P10-E3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
|
1N6642UMicrosemi |
DIODE GEN PURP 75V 300MA D5D |
|
SR502HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO201AD |
|
SF1601PT C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 16A TO247AD |
|
CDBERT0230RComchip Technology |
DIODE SCHOTTKY 30V 200MA 0503 |