DIODE GPP HE 6A R-6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 100pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
VS-MURB1520PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 15A D2PAK |
![]() |
GPP60DHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A P600 |
![]() |
1N4937GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
![]() |
1N5822 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A DO201AD |
![]() |
V8P10-E3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
![]() |
1N6642UMicrosemi |
DIODE GEN PURP 75V 300MA D5D |
![]() |
SR502HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO201AD |
![]() |
SF1601PT C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 16A TO247AD |
![]() |
CDBERT0230RComchip Technology |
DIODE SCHOTTKY 30V 200MA 0503 |
![]() |
VS-25ETS10STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
![]() |
SF63G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 6A DO201AD |
![]() |
ZC2811ETAZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 15V 20MA SOT23-3 |
![]() |
1N4454_S00ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35 |