CAP TANT 33UF 10% 6.3V 1206
CAP CER 22PF 50V C0G/NP0 0603
DIODE SCHOTTKY 100V 8A TO277A
Type | Description |
---|---|
Series: | eSMP®, TMBS® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 680 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 70 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N6642UMicrosemi |
DIODE GEN PURP 75V 300MA D5D |
|
SR502HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO201AD |
|
SF1601PT C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 16A TO247AD |
|
CDBERT0230RComchip Technology |
DIODE SCHOTTKY 30V 200MA 0503 |
|
VS-25ETS10STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
|
SF63G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 6A DO201AD |
|
ZC2811ETAZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 15V 20MA SOT23-3 |
|
1N4454_S00ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35 |
|
SF30AG-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A DO201AD |
|
VS-MBRB745PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7.5A D2PAK |
|
S3BHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
RL1N4002Rectron USA |
DIODE GEN PURP 1000V 1A A-405 |
|
US1KHE3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |