CUT-TAPE VERSION. STANDARD RECO
SENSOR PHOTODIODE 900NM
Type | Description |
---|---|
Series: | - |
Package: | Strip |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-41, Axial |
Supplier Device Package: | DO-41/DO-204AC |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GP10JE-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
CDBU0130RComchip Technology |
DIODE SCHOTTKY 30V 100MA 0603 |
|
MBR1650HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 16A TO220AC |
|
NTE5863NTE Electronics, Inc. |
R-600PRV 6A ANODE |
|
SL310-F1-3000HF |
DIODE SCHOTTKY 100V 3A SOD123FL |
|
JANTX1N5806URSRoving Networks / Microchip Technology |
DIODE GEN PURP 150V 1A APKG |
|
SFA1005G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 10A TO220AC |
|
S1G-KR3GTSC (Taiwan Semiconductor) |
1A, 400V, STANDARD RECOVERY RECT |
|
BYW29E-200,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 200V 8A TO220AC |
|
SE15FD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO219AB |
|
S3A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMC |
|
ES1D-F1-0000HF |
DIODE GEN PURP 200V 1A DO214AC |
|
DST1050SWickmann / Littelfuse |
DIODE SCHOTTKY 50V 10A TO277B |