DIODE GEN PURP 200V 1.5A DO219AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 1.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 900 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 10.5pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S3A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMC |
|
ES1D-F1-0000HF |
DIODE GEN PURP 200V 1A DO214AC |
|
DST1050SWickmann / Littelfuse |
DIODE SCHOTTKY 50V 10A TO277B |
|
GP3D010A065BSemiQ |
SIC SCHOTTKY DIODE 650V TO247-2 |
|
S3GSMB-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
NRVBM2H100T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 2A POWERMITE |
|
SF28G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
BYW29-100-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
|
S8GC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 8A DO214AB |
|
F11K120Diotec Semiconductor |
DIODE FR D5.4X7.5 120V 11A |
|
HS5K V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 5A DO214AB |
|
SBRD8350T4G-VF01Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
ES1J-AQDiotec Semiconductor |
DIODE SFR SMA 600V 1A |