DIODE GEN PURP 300V 10A TO220AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 300 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S1G-KR3GTSC (Taiwan Semiconductor) |
1A, 400V, STANDARD RECOVERY RECT |
|
BYW29E-200,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 200V 8A TO220AC |
|
SE15FD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO219AB |
|
S3A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMC |
|
ES1D-F1-0000HF |
DIODE GEN PURP 200V 1A DO214AC |
|
DST1050SWickmann / Littelfuse |
DIODE SCHOTTKY 50V 10A TO277B |
|
GP3D010A065BSemiQ |
SIC SCHOTTKY DIODE 650V TO247-2 |
|
S3GSMB-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
NRVBM2H100T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 2A POWERMITE |
|
SF28G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
BYW29-100-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
|
S8GC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 8A DO214AB |
|
F11K120Diotec Semiconductor |
DIODE FR D5.4X7.5 120V 11A |