DIODE GEN PURP 400V 70A DO203AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 70A |
Voltage - Forward (Vf) (Max) @ If: | 1.85 V @ 219.8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-203AB |
Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-3EYH01HM3/HVishay General Semiconductor – Diodes Division |
FRED PT RECTIFIER SLIMSMAW |
|
AU3PMHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.4A TO277A |
|
US1J-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A SMA |
|
ES2GHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
SBR10E45P5-13DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 10A POWERDI5 |
|
NTE5914NTE Electronics, Inc. |
R-100PRV 20A CATH CASE |
|
1N647NTE Electronics, Inc. |
D-SI 400V .4A |
|
S2M-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 1000V DO-214AA |
|
RS07G-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
VS-8EWL06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
|
JANTXV1N6638Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA AXIAL |
|
MUR160GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO41 |
|
MPG06AHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |