DIODE AVALANCH 1KV 1.4A TO277A
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1.4A |
Voltage - Forward (Vf) (Max) @ If: | 2.5 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 1000 V |
Capacitance @ Vr, F: | 42pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
US1J-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A SMA |
|
ES2GHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
SBR10E45P5-13DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 10A POWERDI5 |
|
NTE5914NTE Electronics, Inc. |
R-100PRV 20A CATH CASE |
|
1N647NTE Electronics, Inc. |
D-SI 400V .4A |
|
S2M-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 1000V DO-214AA |
|
RS07G-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
VS-8EWL06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
|
JANTXV1N6638Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA AXIAL |
|
MUR160GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO41 |
|
MPG06AHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
|
BAS321JXNexperia |
BAS321J/SOD323/SOD2 |
|
SS10P6HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |