Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 400 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S2M-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 1000V DO-214AA |
|
RS07G-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
VS-8EWL06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
|
JANTXV1N6638Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA AXIAL |
|
MUR160GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO41 |
|
MPG06AHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
|
BAS321JXNexperia |
BAS321J/SOD323/SOD2 |
|
SS10P6HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
|
BAT64-06E6327Rochester Electronics |
BAT64 - HIGH SPEED SWITCHING, CL |
|
VS-20CTH03STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE STANDARD 300V 10A TO263AB |
|
SK13B M4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
123SPC080ASMC Diode Solutions |
DIODE SCHOTTKY 80V 120A SPD-3A |
|
VS-SD1100C32LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3.2KV 910A B-43 |