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TK4R4P06PL,RQ

TK4R4P06PL,RQ

MOSFET N-CHANNEL 60V 58A DPAK

R125172000

R125172000

SMA M RA CR SD 2.6/50 C100

TK4R4P06PL,RQ

TK4R4P06PL,RQ

Image is for reference, please contact us to get the real picture

Part No :

TK4R4P06PL,RQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CHANNEL 60V 58A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11736 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
TK4R4P06PL,RQ PDF
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:48.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3280 pF @ 30 V
FET Feature:-
Power Dissipation (Max):87W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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