MOSFET N-CHANNEL 650V 47A TO247
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 81mOhm @ 15.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3111.9 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 417W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPCA8055-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 56A 8SOP |
|
IXTH68P20TWickmann / Littelfuse |
MOSFET P-CH 200V 68A TO247 |
|
NVMFS5833NT3GRochester Electronics |
MOSFET N-CH 40V 16A 5DFN |
|
IPP052N06L3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
SI3433CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 6A 6TSOP |
|
BUK7509-75A,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.009OHM, 1 |
|
NTHD4P02FT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A CHIPFET |
|
STH260N6F6-6STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |
|
DMG3415UFY4Q-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 16V 2.5A X2-DFN2015 |
|
STP13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220 |
|
UPA2720GR-E1-ARochester Electronics |
MOSFET N-CH 30V 14A 8PSOP |
|
SUM110P04-05-E3Vishay / Siliconix |
MOSFET P-CH 40V 110A TO263 |
|
FDU3580Rochester Electronics |
MOSFET N-CH 80V 7.7A IPAK |