MOSFET N-CH 600V 2A PW-MOLD2
Type | Description |
---|---|
Series: | π-MOSVII |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.3Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PW-MOLD2 |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFL014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
TJ200F04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 200A TO220SM |
|
SI4638DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 22.4A 8SO |
|
FDP75N08ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 75A TO220-3 |
|
RSH065N06GZETBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
PSMN4R3-80ES,127Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
BTS131E3045ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3054-T1-ARochester Electronics |
MOSFET N-CH 50V 100MA SC70-3 SSP |
|
RF6E045AJTCRROHM Semiconductor |
MOSFET N-CHANNEL 30V 4.5A TUMT6 |
|
IRFS510ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH1R403NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A 8SOP |
|
SI7464DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8 |
|
FDP7030BLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 60A TO220-3 |