SIC MOSFET N-CH 9A TO247-3
Type | Description |
---|---|
Series: | G3R™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1700 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 585mOhm @ 4A, 15V |
Vgs(th) (Max) @ Id: | 2.7V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 15 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 454 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | 88W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPN50R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A SOT223 |
|
TK160F10N1,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 160A TO220SM |
|
STH150N10F7-2STMicroelectronics |
MOSFET N-CH 100V 110A H2PAK-2 |
|
BSZ520N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A 8TSDSON |
|
CPC3902ZTRWickmann / Littelfuse |
MOSFET N-CH 250V SOT223 |
|
BUK9Y19-55B/C2,115Rochester Electronics |
MOSFET N-CH 55V 46A LFPAK56 |
|
IPD90P03P404ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-3 |
|
SI4864DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 17A 8SO |
|
IRFS830BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFPG40PBFVishay / Siliconix |
MOSFET N-CH 1000V 4.3A TO247-3 |
|
SIB417EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 9A PPAK SC75-6 |
|
SI2319DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 2.7A/3.6A SOT23 |
|
STW40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A TO247 |