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IPA60R360P7XKSA1

IPA60R360P7XKSA1

MOSFET N-CHANNEL 650V 9A TO220

IPA60R360P7XKSA1

IPA60R360P7XKSA1

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Part No :

IPA60R360P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL 650V 9A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
236623 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPA60R360P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:555 pF @ 400 V
FET Feature:-
Power Dissipation (Max):22W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA60R360P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA60R360P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA60R360P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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