MOSFET N-CH 20V 18.1A PWRDI3333
DIODE GPP FAST DO-15
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 18.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 4.6mOhm @ 13.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 164 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 6495 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.05W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SCTWA50N120STMicroelectronics |
SICFET N-CH 1200V 65A HIP247 |
|
IRFR221Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD16415Q5TTexas Instruments |
MOSFET N-CH 25V 100A 8VSON |
|
NDD01N60-1GRochester Electronics |
MOSFET N-CH 600V 1.5A IPAK |
|
AUIRFS3307ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
NVMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
IXFQ50N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
IPD25DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 6.5A TO252-3 |
|
IPD70R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO252-3 |
|
2SK4197FSRochester Electronics |
MOSFET N-CH 600V 3.3A TO220-3 |
|
IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
RJ1L08CGNTLLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTL |
|
CSD18533Q5ATTexas Instruments |
MOSFET N-CH 60V 17A/100A 8VSON |