GANFET N-CH 650V 16A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.2 nC @ 4.5 V |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 720 pF @ 480 V |
FET Feature: | - |
Power Dissipation (Max): | 81W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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