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RQ3C150BCTB

RQ3C150BCTB

MOSFET P-CHANNEL 20V 30A 8HSMT

RQ3C150BCTB

RQ3C150BCTB

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Part No :

RQ3C150BCTB

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CHANNEL 20V 30A 8HSMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15511 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
RQ3C150BCTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 10 V
FET Feature:-
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
RQ3C150BCTB is available at GangBo-ic.com, Please review product page below for detailed information, including RQ3C150BCTB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ3C150BCTB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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