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IPD65R380E6ATMA1

IPD65R380E6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

IPD65R380E6ATMA1

IPD65R380E6ATMA1

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Part No :

IPD65R380E6ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 10.6A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14990 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
IPD65R380E6ATMA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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