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IRFB4227PBF

IRFB4227PBF

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Part No :

IRFB4227PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 65A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
582058 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
PDF
IRFB4227PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB4227PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB4227PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB4227PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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