IC FLASH 512GBIT MMC 153WFBGA
Type | Description |
---|---|
Series: | e•MMC™ |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Gb (64G x 8) |
Memory Interface: | MMC |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | - |
Operating Temperature: | -25°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 153-WFBGA |
Supplier Device Package: | 153-WFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
M27C512-90C1TRSTMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
![]() |
EDFA232A2MA-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
![]() |
70V9099L7PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
![]() |
MT29TZZZAD8DKKBT-107 W ES.9F8 TRMicron Technology |
MLC EMMC/LPDDR3 544G |
![]() |
M58LR128KB85ZB5F TRMicron Technology |
IC FLASH 128MBIT PAR 56VFBGA |
![]() |
93C56C-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
![]() |
70P254L40BYGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 81CABGA |
![]() |
MT52L256M32D1PD-107 WT ES:B TRMicron Technology |
IC DRAM 8GBIT 933MHZ FBGA |
![]() |
DS28E81+TMaxim Integrated |
RADIATION RESISTANT |
![]() |
P770015C-F8C000Cypress Semiconductor |
IC GATE NOR |
![]() |
MT48H32M16LFBF-6:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
![]() |
70P269L90BYGIRenesas Electronics America |
IC SRAM 256KBIT PAR 100CABGA |
![]() |
MT42L256M64D4LD-25 WT:AMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |