IC SRAM 1MBIT PARALLEL 100TQFP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 1Mb (128K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | 7.5 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT29TZZZAD8DKKBT-107 W ES.9F8 TRMicron Technology |
MLC EMMC/LPDDR3 544G |
|
M58LR128KB85ZB5F TRMicron Technology |
IC FLASH 128MBIT PAR 56VFBGA |
|
93C56C-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
70P254L40BYGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 81CABGA |
|
MT52L256M32D1PD-107 WT ES:B TRMicron Technology |
IC DRAM 8GBIT 933MHZ FBGA |
|
DS28E81+TMaxim Integrated |
RADIATION RESISTANT |
|
P770015C-F8C000Cypress Semiconductor |
IC GATE NOR |
|
MT48H32M16LFBF-6:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
70P269L90BYGIRenesas Electronics America |
IC SRAM 256KBIT PAR 100CABGA |
|
MT42L256M64D4LD-25 WT:AMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |
|
MT29RZ4C8DZZMHAN-18W.8D TRMicron Technology |
IC FLASH 4GIBT LPPDR |
|
NMC87C257V200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256MBIT PARALLEL 32PLCC |
|
EDF8132A3PB-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216WFBGA |